Scanning Spreading Resistance Microscopy

Lecture Announcement

	Organizer: IEEE Electron Devices Society (EDS) and Lasers and Electro-Optics Society
	Title: Scanning Spreading Resistance Microscopy of MOCVD Grown InP and GaAs Optoelectronic and Microelectronic Structures
	Speaker: Dr. St-John Dixon-Warren Nortel Networks

Abstract:
Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) are new scanning probe microscopy techniques that provide localized resistance profiling on a semiconductor surface. The technique, which is based on contact-mode atomic force microscopy (AFM), provides information on the two dimensional distribution of charge carriers and on the position of pn junctions in semiconductor structures. We have used SSRM to examine the cleaved edge of a number of MOCVD grown InP and GaAs optoelectronic and microelectronic structures, such as heterojunction bipolar transistors and buried heterojunction laser structures. We have also performed careful measurements on dopant staircase structures. Information on the spatial distribution of dopants in the epitaxial layers was obtained, and the effect of the applied tip voltage was investigated. We will also compare the SSRM results with those obtained using SCM on some of the same samples. We find that the two techniques have differing strengths and weaknesses.

Biography:
St.John Dixon-Warren received his Ph.D. degree in chemical physics from the University of Toronto in 1992. He worked as a NATO/NSERC Postdoctoral Fellow at the University of Cambridge, UK, from Oct. 1992 to Oct. 1994, and then as a Postdoctoral research associate at the Joint Institute for Laboratory Astrophysics, University of Colorado at Boulder, USA, for half a year. From 1995 to 1999 he served as Assistant Professor of Chemistry at Washington State University. In September 1999, he joined Nortel Networks as an Analytical Scientist in Materials and Devices Analysis group at Ottawa, Ontario. His current research interests are focused on surface and interface analysis of optoelectronic and microelectronic devices, particularly by using Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and scanning probe microscopy techniques, such as AFM, SSRM, SCM, STM. He has published over 30 papers in international journals.

Time and Location:
Date: Thursday September 13
Time: 11:00 a.m. - 12:00 p.m..
Place: University of Toronto, Medical Sciences Building, room 3171
The Medical Sciences Building is located at 1 King's College Circle.
Coffee and cookies will be served

For more information contact Emanuel Istrate,
istrate@ecf.utoronto.ca.

The Institute of Electrical and Electronics Engineers, Toronto Section
E-mail sec.toronto@ieee.org

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