An InAs Based Transistor Approach to Terahertz Electronics

Lecture Announcement

	Organizer: IEEE Electron Devices Society (EDS)
	Title: An InAs Based Transistor Approach to Terahertz Electronics: Concepts and Materials Science
	Speaker: Prof. Jerry Woodall Yale University

Abstract:
Owing to its small band gap, high electron mobility, and high saturation drift velocity, InAs is an appealing candidate for low power and ultra-high speed (THz) device applications. However, InAs has not been well studied in the past for such applications because of the lack of a suitable lattice-matched substrate or latticed-matched heterostructure to facilitate the design and fabrication of desirable transistors. This talk will present our device concepts and materials science of our new enabler: InAs and related alloys grown on GaP substrates. A key feature of InAs grown on GaP is the self annihilation of threading dislocations generated by the 11% lattice mismatch between InAs and GaP. This annihilation results in differential electron mobilities of 20,000 cm2/volt-sec for only 2 microns of epilayer growth, a surprising and happy result in our quest of THz devices.

Biography:
Jerry M. Woodall, the C. Baldwin Sawyer Professor of Electrical Engineering at Yale University, received a B.S. in metallurgy in 1960 from MIT. In 1982, he was awarded a Ph.D. in Electrical Engineering from Cornell University. Early in his career, he pioneered the horizontal Bridgman growth of both high purity GaAs crystals, used for the first definitive measurement of the carrier velocity-electric field relationships for GaAs, and highly perfect GaAs crystals used to fabricate the early injection lasers. He then pioneered and patented the development of the liquid phase epitaxy (LPE) of Si doped GaAs high efficiency IR LEDs, used today in remote control and data link applications such as TV sets and IR LAN. This was followed by the invention and seminal work on the LPE of GaAlAs and GaAlAs/GaAs heterojunctions used in super-bright red LEDs and lasers used, for example, in CD players and short link optical fiber communications. He also pioneered and patented the GaAlAs/GaAs heterojunction bipolar transistor used in, for example, cellular phones. His demonstration of the GaAlAs/GaAs heterojunction led to the creation of important new areas of solid-state physics, such as: superlattice, low dimension, mesoscopic, and resonant tunneling physics. Also, using MBE and the GaAs/InGaAs strained, non-lattice-matched heterostructure, he pioneered the "pseudomorphic" HEMT, a state-of-the-art high speed device widely used in commercial devices and circuits. This work led to the use of the pseudomorphic InAs/GaAs heterostructure to make self-organized quantum dots, a currently popular topic in physics. His present work involves the MBE growth of III-V materials and devices with special emphasis on metal contacts and doping studies. His efforts are recorded in over 300 publications in the open literature, 67 issued U.S. patents, and 1 patent pending. His accomplishments have been recognized by his election as IBM Fellow in 1985, by five major IBM Research Division Awards, 30 IBM Invention Achievement Awards, and an IBM Corporate Award in 1992 for the invention of the GaAlAs/GaAs heterojunction. Other recognition includes 9 NASA certificates of recognition, a 1975 IR-100 Award, the 1980 Electronics Division Award of the Electrochemical Society (ECS), the 1984 IEEE Jack A. Morton Award, the 1985 ECS Solid State Science and Technology Award, the 1988 Heinrich Welker Gold Medal and International GaAs Symposium Award, the 1990 American Vacuum Society (AVS) Medard Welch (Founder’s) Award, its highest honor, the 1997 Eta Kappa Nu Vladimir Karapetoff Eminent Members' Award, the 1998 American Society for Engineering Education's General Electric Senior Research Award, and the 1998 Electrochemical Society's Edward Goodrich Acheson (Founder's) Award, its highest honor. Honorific recognition includes his election to the National Academy of Engineering in 1989, Fellow of the American Physical Society in 1982, IEEE Fellow in 1990, ECS Fellow in 1992, and AVS Fellow in 1994. His national professional society activities include President of the ECS (1990), President of the AVS (1998-1999), and member of the American Institute of Physics Board of Directors and Executive Committee (1988-1991, 1999-present).

Time and Location:
Date: Monday, April 9, 2001
Time: 3:00 p.m.
Place: University of Toronto
Mechanical Engineering Building,
room 254
5 King's College Road, Toronto

For more information contact Emanuel Istrate,
istrate@ecf.utoronto.ca.

The Institute of Electrical and Electronics Engineers, Toronto Section
E-mail sec.toronto@ieee.org

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