Integration
Dr. Gordon Knight
Senior Materials Scientist for the
Metal Organic Chemical Vapour Deposition department
Nortel Networks
| Organizer: IEEE Toronto Section, Circuits and Devices Chapter |
| Title: In-Situ Etching in an MOCVD Reactor:
Prospects for Device Integration |
| Speaker: Dr. Gordon Knight Senior Materials Scientist for the Metal Organic Chemical Vapour Deposition department Nortel Networks |
| Abstract: Integrated devices such as laser/modulators are currently under development to provide advanced capability in fiber optics communication systems. These devices will have multiple growth and processing steps, which must not affect the required device performance or reliability. Consequently, there has been a large time lag between the initial demonstration of the device and the actual development of reliable devices with the desired properties. One of the key fabrication steps is the production of regrowth interfaces with low defect densities and impurity levels. In-situ etching and regrowth in an MOCVD reactor has recently been shown to be a promising technique to produce high quality regrowth interfaces. Improved quality GaAs/AlGaAs lasers have been produced by an in-situ technique, and etching of InP using methyl chloride has been recently demonstrated at Nortel Networks. Excellent etching morphology for InP was demonstrated with a maximum etching rate of 0.75mm/hr, with an etch depth uniformity of + 3.2% for a 50mm diameter InP wafer. The dependence of the etching rate on precursor flows and etching temperature has also been studied, and a reduction of residual silicon and oxygen contamination at the regrowth interface has been demonstrated. Organochlorine compounds have also been used by other workers to produce high quality buried heterostructure lasers. Use of these techniques to produce advanced device structures will be discussed. |
| Biography: Dr. Knight's B.Sc,M.Sc. and PhD. degrees were obtained at the University of Waterloo in the field of physical chemistry, doing post graduate research in the area of laser chemistry. Upon graduating U. of W., Dr. Knight was employed in the advanced technology laboratory of Bell-Northern Research (now Nortel Networks) in the field of liquid phase epitaxy. Research centered on development of high purity InP/InGaAs compounds, and novel semi-insulating materials made by titanium doping of InP. In 1989 the work shifted to MOCVD, exploring advanced detector structures such as 10 Gb/s high speed PIN's and avalanche photodiodes. Work on semi-insulating materials continued using MOCVD, giving the first circular grating surface-emitting laser in the InP/InGaAsP system, buried heterostructure lasers with quaternary blocking layers, and polarization insensitive tunable filters. Currently, the PIN and APD detector structures have passed successfully into hard development and production for OC48 and OC192 fiber optic systems, and research work continues in the field of in-situ etching and selective area epitaxy for advanced devices and future integrated optoelectronic devices. |
| Time and Location: Friday, March 10, 2000, at 11:00 a.m. University of Toronto Roseburg Building, ROOM 208 4 Taddlecreek Road, Toronto |
The Institute of Electrical and Electronics Engineers,
Toronto Section
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