| Organizer: IEEE Toronto Section, Circuits and Devices Society Chapter |
| Title: Defects and Diffusion in III-V Semiconductors |
| Abstract: Atomic diffusion profiles in the III-Vs rarely follow the well-known solutions to Fick's law. Reasons for this will be discussed, leading to a consideration of the interactions which take place between the diffusing atoms and the various crystal defects present, both charged and uncharged. The talk will be illustrated with results from the literature and will finish with a description with the work which has been carried out at Nottingham on impurity-induced quantum well intermixing. |
| Speaker: Professor Brian Tuck University of Nottingham, UK Biography. Brian Tuck is a graduate of London University, with the degrees of BSc, PhD and DSc. He is Professor of Physical Electronics in the School of Electrical and Electronic Engineering at the University of Nottingham, UK (a member, with University of Toronto, of the Universitas 21 group of universities.) He was Head of School for the ten years to the summer of 1998 and is now enjoying a sabbatical year working as a visiting researcher at Nortel Networks in Ottawa. Before going to Nottingham, he worked for Philips at their British research laboratory. He has also worked for short periods at Philips' Paris laboratory, at Cornell University and at universities in Baghdad and Kuala Lumpur. He is best known for his work on diffusion in semiconductors and has written two books on the subject "Introduction to diffusion in semiconductors" (1974) and "Atomic diffusion in III-V semiconductors" (1988). He is also the author of an undergraduate textbook on physical electronics. |
| Time and Location: Thursday, April 8, 1999, 3:00 p.m. Sanford Fleming Building, Room 1101 University of Toronto
The Institute of Electrical and Electronics Engineers,
Toronto Section Send comments to tor.sect@tor.ieee.org |
